Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy

Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography

(2012) David Cooper et al.   APPLIED PHYSICS LETTERS

Experimental Investigation of Hole Transport in Strained $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{SOI}$ pMOSFETs—Part I: Scattering Mechanisms in Long-Channel Devices

(2011) Mikaël Casse et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Practical and Reproducible Mapping of Strains in Si Devices Using Geometric Phase Analysis of Annular Dark-Field Images From Scanning Transmission Electron Microscopy

(2010) Jayhoon Chung et al.   IEEE ELECTRON DEVICE LETTERS

Dark field electron holography for quantitative strain measurements with nanometer-scale spatial resolution

(2009) David Cooper et al.   APPLIED PHYSICS LETTERS

Improved precision in strain measurement using nanobeam electron diffraction

(2009) A. Béché et al.   APPLIED PHYSICS LETTERS

Nanoscale holographic interferometry for strain measurements in electronic devices

(2008) Martin Hÿtch et al.   NATURE

Direct Mapping of Strain in a Strained Silicon Transistor by High-Resolution Electron Microscopy

(2008) Florian Hüe et al.   PHYSICAL REVIEW LETTERS