Spin transport and precession in graphene measured by nonlocal and three-terminal methods

Anomalous scaling of spin accumulation in ferromagnetic tunnel devices with silicon and germanium

(2014) S. Sharma et al.   PHYSICAL REVIEW B

High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts

(2013) André Dankert et al.   ACS Nano

Thermal creation of electron spin polarization in n-type silicon

(2013) André Dankert et al.   APPLIED PHYSICS LETTERS

How reliable are Hanle measurements in metals in a three-terminal geometry?

(2013) Oihana Txoperena et al.   APPLIED PHYSICS LETTERS

All-electrical spin injection and detection in the Co2FeSi/GaAs hybrid system in the local and non-local configuration

(2013) P. Bruski et al.   APPLIED PHYSICS LETTERS

Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC

(2013) Bastian Birkner et al.   PHYSICAL REVIEW B

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

(2013) André Dankert et al.   Scientific Reports

Contact-induced spin relaxation in Hanle spin precession measurements

(2012) T. Maassen et al.   PHYSICAL REVIEW B

Crossover from Spin Accumulation into Interface States to Spin Injection in the Germanium Conduction Band

(2012) A. Jain et al.   PHYSICAL REVIEW LETTERS

Comparison of spin lifetimes inn-Ge characterized between three-terminal and four-terminal nonlocal Hanle measurements

(2012) L-T Chang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Silicon spintronics with ferromagnetic tunnel devices

(2012) R Jansen et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Room-Temperature Electron Spin Transport in a Highly Doped Si Channel

(2011) Toshio Suzuki et al.   Applied Physics Express

Comparison of spin signals in silicon between nonlocal four-terminal and three-terminal methods

(2011) Tomoyuki Sasaki et al.   APPLIED PHYSICS LETTERS

Spin-injection spectra of CoFe/GaAs contacts: Dependence on Fe concentration, interface, and annealing conditions

(2011) G. Salis et al.   PHYSICAL REVIEW B

Spin Relaxation in Single-Layer and Bilayer Graphene

(2011) Wei Han et al.   PHYSICAL REVIEW LETTERS

Electrical creation of spin polarization in silicon at room temperature

(2009) Saroj P. Dash et al.   NATURE

Electron spin relaxation in graphene: The role of the substrate

(2009) Christian Ertler et al.   PHYSICAL REVIEW B

Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor

(2009) M. Tran et al.   PHYSICAL REVIEW LETTERS

Intrinsic and extrinsic performance limits of graphene devices on SiO2

(2008) Jian-Hao Chen et al.   Nature Nanotechnology