Significant roles of low-temperature post-metallization annealing in solution-processed oxide thin-film transistors
Published 2014 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Significant roles of low-temperature post-metallization annealing in solution-processed oxide thin-film transistors
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 13, Pages 133505
Publisher
AIP Publishing
Online
2014-10-01
DOI
10.1063/1.4897003
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Correlation between Ti source/drain contact and performance of InGaZnO-based thin film transistors
- (2013) Kwang-Hyuk Choi et al. APPLIED PHYSICS LETTERS
- Reduction of charge injection barrier by 1-nm contact oxide interlayer in organic field effect transistors
- (2012) Peter Darmawan et al. APPLIED PHYSICS LETTERS
- Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs
- (2012) Sang Ho Rha et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films
- (2012) Yong-Hoon Kim et al. NATURE
- Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors
- (2011) Hsiao-Wen Zan et al. ADVANCED MATERIALS
- Ambipolar Oxide Thin-Film Transistor
- (2011) Kenji Nomura et al. ADVANCED MATERIALS
- Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement
- (2011) Hsiao-Wen Zan et al. APPLIED PHYSICS LETTERS
- Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
- (2011) Kwang Hwan Ji et al. APPLIED PHYSICS LETTERS
- Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In–Ga–Zn–O Thin-Film Transistors
- (2011) Wei-Tsung Chen et al. IEEE ELECTRON DEVICE LETTERS
- Effect of annealing time on bias stress and light-induced instabilities in amorphous indium–gallium–zinc-oxide thin-film transistors
- (2011) Md Delwar Hossain Chowdhury et al. JOURNAL OF APPLIED PHYSICS
- Role of environmental and annealing conditions on the passivation-free in-Ga–Zn–O TFT
- (2011) Chur-Shyang Fuh et al. THIN SOLID FILMS
- Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors
- (2010) Yong Xu et al. JOURNAL OF APPLIED PHYSICS
- Present status of amorphous In–Ga–Zn–O thin-film transistors
- (2010) Toshio Kamiya et al. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
- Copper source/drain electrode contact resistance effects in amorphous indium-gallium-zinc-oxide thin film transistors
- (2009) Woong-Sun Kim et al. Physica Status Solidi-Rapid Research Letters
- Device characteristics improvement of a-In–Ga–Zn–O TFTs by low-temperature annealing
- (2009) Yutomo Kikuchi et al. THIN SOLID FILMS
- Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing
- (2008) Kenji Nomura et al. APPLIED PHYSICS LETTERS
- Control of threshold voltage in ZnO-based oxide thin film transistors
- (2008) Jin-Seong Park et al. APPLIED PHYSICS LETTERS
- Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
- (2008) Jin-Seong Park et al. APPLIED PHYSICS LETTERS
- Gallium–Indium–Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material
- (2008) Pedro Barquinha et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started