Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism

Interface State Effects on Resistive Switching Behaviors of Pt/Nb-Doped SrTiO3Single-Crystal Schottky Junctions

(2014) El Mostafa Bourim et al.   ECS Journal of Solid State Science and Technology

Nonvolatile bipolar resistive switching in amorphous Sr-doped LaMnO3 thin films deposited by radio frequency magnetron sputtering

(2013) Dongqing Liu et al.   APPLIED PHYSICS LETTERS

Formation process of conducting filament in planar organic resistive memory

(2013) S. Gao et al.   APPLIED PHYSICS LETTERS

Influence of the growth temperature of AlN nucleation layer on AlN template grown by high-temperature MOCVD

(2013) Yiren Chen et al.   MATERIALS LETTERS

Regenerable Resistive Switching in Silicon Oxide Based Nanojunctions

(2012) Massimiliano Cavallini et al.   ADVANCED MATERIALS

Realization of a High-Performance GaN UV Detector by Nanoplasmonic Enhancement

(2012) Dabing Li et al.   ADVANCED MATERIALS

Shift of responsive peak in GaN-based metal-insulator-semiconductor photodetectors

(2012) Kun You et al.   APPLIED PHYSICS LETTERS

Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure

(2012) C. Chen et al.   JOURNAL OF APPLIED PHYSICS

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

High-brightness polarized light-emitting diodes

(2012) Elison Matioli et al.   Light-Science & Applications

Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

(2011) M. R. Holzworth et al.   APPLIED PHYSICS LETTERS

Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stack

(2011) Xing Wu et al.   NANOTECHNOLOGY

Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices

(2010) Hu Young Jeong et al.   ADVANCED FUNCTIONAL MATERIALS

Stable Switching Characteristics of Organic Nonvolatile Memory on a Bent Flexible Substrate

(2010) Yongsung Ji et al.   ADVANCED MATERIALS

On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors

(2010) Dawei Yan et al.   APPLIED PHYSICS LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

(2008) R. Stoklas et al.   APPLIED PHYSICS LETTERS

The fourth element

(2008) James M. Tour et al.   NATURE

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Indium-free success

(2008) Ulrich Schwarz   Nature Photonics

MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?

(2008) G. I. Meijer   SCIENCE