Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Schottky contact formation on polar and non-polar AlN

(2014) Pramod Reddy et al.   JOURNAL OF APPLIED PHYSICS

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

(2014) Pramod Reddy et al.   JOURNAL OF APPLIED PHYSICS

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

(2014) Wei Guo et al.   JOURNAL OF APPLIED PHYSICS

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

(2013) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Highly conductive n-AlxGa1−xN layers with aluminum mole fractions above 80%

(2013) Frank Mehnke et al.   APPLIED PHYSICS LETTERS

Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy

(2013) S. F. Chichibu et al.   JOURNAL OF APPLIED PHYSICS

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

(2012) Zachary Bryan et al.   JOURNAL OF ELECTRONIC MATERIALS

Properties of ZnO thin films grown on Si substrates by photo-assisted MOCVD

(2007) Xiangping Li et al.   APPLIED SURFACE SCIENCE