Article
Engineering, Electrical & Electronic
Kentaro Kasahara, Kazuki Senga, Mitsuo Sakashita, Shigehisa Shibayama, Osamu Nakatsuka
Summary: The interface crystalline structures and electrical conduction properties of epitaxial Hf-digermanide (HfGe2)/n-Ge(001) contacts with different electrode sizes were investigated. Microfabrication improved the interface uniformity and suppressed the strain relaxation of HfGe2. The applied strain of epitaxial HfGe2 controlled by microfabrication is a possible parameter for improving the interface uniformity.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2022)
Article
Engineering, Electrical & Electronic
Paul A. Clifton, Andreas Goebel, Walter A. Harrison
Summary: Interfacial arsenic monolayers are used to reduce the Schottky barrier and resistance at metal contacts to n-type silicon. This study confirms that interfacial engineering can significantly reduce contact resistivity, up to a factor of 100 for aluminum contacts to n-type silicon doped at 1 x 1019 cm-3. The effect of an arsenic monolayer is explained theoretically by the formation of an additional electronic dipole between the metal and the silicon. Arsenic monolayers are formed and characterized through various methods.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Chemistry, Physical
Zilei Wang, Jian He, Wenjie Wang, Hao Lin, Zhiyuan Xu, Qiming Liu, Shanglong Peng, Juan Hou, Deyan He, Pingqi Gao
Summary: This study investigates solution-processed alkali metal acetates as effective electron-selective contacts in c-Si solar cells, demonstrating a significant reduction in contact resistivity and high-quality surface passivation. The development of such electron-selective contacts shows enormous potential for low-cost and high-efficiency c-Si solar cells.
ACS APPLIED ENERGY MATERIALS
(2021)
Article
Chemistry, Physical
Shuoheng Xu, Zheng Huang, Jie Guan, Yaowu Hu
Summary: In this paper, a method called laser shock induced superplastic deformation (LSISD) is proposed to enhance the metal-semiconductor interfaces and transistor performances of 2D-TMDs. The mechanism is investigated through various experiments and simulations, and the LSISD method is applied to MoS2/graphene vertical transistors to demonstrate potential improvement in interface contact and electrical properties.
Article
Chemistry, Physical
Fei Cao, Yang-xi Xu, Jin-chi Sui, Xing-ji Li, Jian-qun Yang, Ying Wang
Summary: This paper investigates the electrical and structural properties of Cu/Ti/Al ohmic contacts to p-type 4H-SiC with different annealing temperatures and Cu layer thicknesses. The results show that the Cu/Ti/Al contact forms ohmic contact with a contact resistivity of 1.0×10-4 Ω·cm2 after annealing at 800 degrees C. The surface roughness and number of pits on the sample surface increase with the increase of annealing temperature.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Nanoscience & Nanotechnology
Seonyeong Kim, Dong Hoon Shin, Yong-Sung Kim, In-Ho Lee, Chang-Won Lee, Sunae Seo, Suyong Jung
Summary: The energy band alignments and material properties at the contacts between metal and 2D semiconducting transition metal dichalcogenide films are essential for electronic and optical device applications. Vertical diodes with asymmetric metal-SCTMD contact areas were used to study contact-limited charge flows in tunneling and emission transport regimes. The experimental and analytical approaches demonstrated in this research provide a powerful tool for evaluating metal-SCTMD contacts qualitatively and quantitatively.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Materials Science, Multidisciplinary
Zhen-Xun Tang, Xin-Gui Tang, Qiu-Xiang Liu, Yan-Ping Jiang
Summary: This study reports a light-induced transition of charged carrier transport in planar Cu/Si-doped GaAs single crystal (Si: GaAs) symmetric double Schottky contacts. Illumination not only increases the carrier concentration but also changes the charged carrier transport mechanism at Cu/Si: GaAs contact. The transition is reflected by the change of shape of current-voltage (I-V) curve caused by illumination. Photovoltaic effect is the crucial driving force behind this transition.
RESULTS IN PHYSICS
(2023)
Article
Chemistry, Multidisciplinary
Guangcan Wang, Fengjing Liu, Ruichang Chen, Mingxu Wang, Yanxue Yin, Jie Zhang, Zixu Sa, Pengsheng Li, Junchen Wan, Li Sun, Zengtao Lv, Yang Tan, Feng Chen, Zai-xing Yang
Summary: In this study, a metal-assisted transfer method was developed to successfully transfer Bi2O2Se nanosheets, enabling adjustable metal-semiconductor contact. High-performance self-powered near-infrared photodetectors were achieved by pre-depositing metal electrodes, opening up new opportunities for next-generation optoelectronic devices.
Article
Energy & Fuels
Leo Basset, Wilfried Favre, Olivier Bonino, Julien Sudre, Gilles Menard, Jean-Pierre Vilcot
Summary: The influence of light on the contact resistivity of the electron and hole contacts of a silicon heterojunction cell was studied using the transfer length method. Results showed that measurements are more accurate in darkness and at high injection levels. Careful attention to passivation properties is needed when fabricating TLM samples.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2021)
Review
Nanoscience & Nanotechnology
Junhao Ni, Quangui Fu, Kostya (Ken) Ostrikov, Xiaofeng Gu, Haiyan Nan, Shaoqing Xiao
Summary: This article introduces various methods to achieve Ohmic contacts on two-dimensional materials and reveals their physical mechanisms. The research findings are of great significance for improving the performance of two-dimensional semiconductor devices.
Article
Materials Science, Multidisciplinary
Yanyan Li, Liqin Su, Yanan Lu, Qingyuan Luo, Pei Liang, Haibo Shu, Xiaoshuang Chen
Summary: A main challenge in developing two-dimensional devices based on atomically thin transition-metal dichalcogenides (TMDs) is achieving metal-semiconductor junctions (MSJs) with low contact resistance and high charge transport capability. Through first-principles calculations, researchers have proposed a solution using van der Waals (vdW) contacts between metallic and semiconducting TMDs, which can reduce the Fermi-level pinning and chemical disorder at the interfaces. By applying a phase-engineering strategy, a wide range of TMD vdW MSJs with desired contact types has been achieved. The study provides a fundamental understanding of the contact properties of TMD vdW MSJs and demonstrates their potential for electronics and optoelectronics applications.
Article
Chemistry, Multidisciplinary
Xiaokun Wen, Wenyu Lei, Xinlu Li, Boyuan Di, Ye Zhou, Jia Zhang, Yuhui Zhang, Liufan Li, Haixin Chang, Wenfeng Zhang
Summary: Recent investigations have found that contacts made with conventional deposition processes using elemental semimetals (Bi and Sb) have the capability to approach the quantum limit in two-dimensional (2D) semiconductor contacts. This study demonstrates the use of a nondestructive van der Waals (vdW) transfer process to create novel compound Dirac semimetal ZrTe2 contacts to MoS2, which exhibit excellent ohmic contact characteristics and adjustable work functions.
Article
Chemistry, Multidisciplinary
Mirko Poljak, Mislav Matic, Tin Zupancic, Ante Zeljko
Summary: This study investigates the impact of edge contacts on the electronic and transport properties, as well as contact resistance, in phosphorene nanoribbons (PNRs) using atomistic quantum transport simulations. The results demonstrate that reducing the length of PNRs increases contact resistance due to strong metallization effects, while reducing the width decreases contact resistance. Furthermore, it is shown that choosing the appropriate edge contact metal can further decrease contact resistance.
Article
Nanoscience & Nanotechnology
Rutger Duflou, Geoffrey Pourtois, Michel Houssa, Aryan Afzalian
Summary: Through ab-initio simulation techniques, we investigated the metal contacts for introduction of 2D materials in scaled devices, and found that a low semiconducting-metal contact resistance can be achieved by selecting appropriate 2D metals. We demonstrated that both ohmic or small Schottky barrier top and side contacts can be achieved with a contact resistance below 100 omega mu m. We also performed a screening of possible 2D-3D top contacts and showed that contact resistances below 100 omega mu m can be achieved in certain conditions.
NPJ 2D MATERIALS AND APPLICATIONS
(2023)
Article
Instruments & Instrumentation
Xiaokai Hu, Xixi Liu, Zuteng Guo, Liming Zhu
Summary: A commercial instrument has been demonstrated for the first time to extract the contact resistivity of thermoelectric legs, showing the variation of contact resistivity at different temperatures.
REVIEW OF SCIENTIFIC INSTRUMENTS
(2021)