Low temperature Cu/Ti/Al Ohmic contacts to p-type 4H-SiC

Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

(2019) S. Rascunà et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Ohmic contacts simultaneously formed on n-type and p-type 4H-SiC at low temperature

(2019) Yanjing He et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Role of W in W/Ni Bilayer Ohmic Contact to n-Type 4H-SiC From the Perspective of Device Applications

(2018) Shu-Yue Jiang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

(2018) Fabrizio Roccaforte et al.   MICROELECTRONIC ENGINEERING

Experimental Investigation of Piezoresistive Effect in p-Type 4H–SiC

(2017) Tuan-Khoa Nguyen et al.   IEEE ELECTRON DEVICE LETTERS

A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti3SiC2Phase

(2016) Tony Abi-Tannous et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing

(2015) T. Abi-Tannous et al.   APPLIED SURFACE SCIENCE

Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC

(2015) M. Vivona et al.   JOURNAL OF APPLIED PHYSICS

Effects of annealing temperature on the structure and electrical properties of tungsten contacts to n-type silicon carbide

(2015) Jacek Rogowski et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Amorphous Ni–Zr layer applied for microstructure improvement of Ni-based ohmic contacts to SiC

(2015) M. Wzorek et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Effects of annealing temperature on the structure and electrical properties of tungsten contacts to n-type silicon carbide

(2015) Jacek Rogowski et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Amorphous Ni–Zr layer applied for microstructure improvement of Ni-based ohmic contacts to SiC

(2015) M. Wzorek et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Critical issues for interfaces to p-type SiC and GaN in power devices

(2012) F. Roccaforte et al.   APPLIED SURFACE SCIENCE

Role of carbon in the formation of ohmic contact in Ni/4HSiC and Ni/Ti/4HSiC

(2012) M. Siad et al.   APPLIED SURFACE SCIENCE

Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide

(2011) K. Buchholt et al.   APPLIED PHYSICS LETTERS

Structural characterization of Ni and Ni/Ti ohmic contact on n-type 4H–SiC

(2011) M. Siad et al.   APPLIED SURFACE SCIENCE

A Novel Tungsten–Nickel Alloy Ohmic Contact to SiC at 900 $^{\circ}\hbox{C}$

(2010) R S Okojie et al.   IEEE ELECTRON DEVICE LETTERS

Stable Electrical Operation of 6H–SiC JFETs and ICs for Thousands of Hours at 500 $^{\circ}\hbox{C}$

(2008) Philip G. Neudeck et al.   IEEE ELECTRON DEVICE LETTERS