Electrical characteristics of multilayer MoS2 transistors at real operating temperatures with different ambient conditions

On the mobility and contact resistance evaluation for transistors based on MoS2 or two-dimensional semiconducting atomic crystals

(2014) Hsiao-Yu Chang et al.   APPLIED PHYSICS LETTERS

Analysis of flicker noise in two-dimensional multilayer MoS2 transistors

(2014) Hyuk-Jun Kwon et al.   APPLIED PHYSICS LETTERS

Strain engineering of selective chemical adsorption on monolayer MoS2

(2014) Liangzhi Kou et al.   Nanoscale

Electric Stress-Induced Threshold Voltage Instability of Multilayer MoS2 Field Effect Transistors

(2013) Kyungjune Cho et al.   ACS Nano

Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors

(2013) Woanseo Park et al.   NANOTECHNOLOGY

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS

Sidewall mobility and series resistance in a multichannel tri-gate MOSFET

(2013) S J Park et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Channel Length Scaling of MoS2 MOSFETs

(2012) Han Liu et al.   ACS Nano

Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

(2012)   APPLIED PHYSICS LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

(2012) Sunkook Kim et al.   Nature Communications

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors

(2010) Yong Xu et al.   JOURNAL OF APPLIED PHYSICS

Length scaling of carbon nanotube transistors

(2010) Aaron D. Franklin et al.   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Narrow graphene nanoribbons from carbon nanotubes

(2009) Liying Jiao et al.   NATURE

Demonstration of Schottky Barrier NMOS Transistors With Erbium Silicided Source/Drain and Silicon Nanowire Channel

(2008) Eu Jin Tan et al.   IEEE ELECTRON DEVICE LETTERS

Temperature Dependence of Carrier Transport of a Silicon Nanowire Schottky-Barrier Field-Effect Transistor

(2008) W.F. Yang et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors

(2008) X. Li et al.   SCIENCE