Interfacial layer reduction and high permittivity tetragonal ZrO2 on germanium reaching ultrathin 0.39 nm equivalent oxide thickness

Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates

(2011) Y.-T. Chen et al.   APPLIED PHYSICS LETTERS

Thermal Robustness and Improved Electrical Properties of Ultrathin Germanium Oxynitride Gate Dielectric

(2011) Katsuhiro Kutsuki et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Desorption kinetics of GeO from GeO2/Ge structure

(2010) Koji Kita et al.   JOURNAL OF APPLIED PHYSICS

Germanium oxynitride gate dielectrics formed by plasma nitridation of ultrathin thermal oxides on Ge(100)

(2009) Katsuhiro Kutsuki et al.   APPLIED PHYSICS LETTERS

Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks

(2008) P. Tsipas et al.   APPLIED PHYSICS LETTERS

The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles

(2008) Dominik Fischer et al.   APPLIED PHYSICS LETTERS

Chemical Bonding, Interfaces, and Defects in Hafnium Oxide∕Germanium Oxynitride Gate Stacks on Ge(100)

(2008) Yasuhiro Oshima et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

High-k/Ge MOSFETs for future nanoelectronics

(2008) Yoshiki Kamata   Materials Today

Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation

(2007) Jungwoo Oh et al.   THIN SOLID FILMS