Germanium oxynitride gate dielectrics formed by plasma nitridation of ultrathin thermal oxides on Ge(100)

First-principles study to obtain evidence of low interface defect density at Ge/GeO2 interfaces

(2009) Shoichiro Saito et al.   APPLIED PHYSICS LETTERS

Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

(2009) Takuji Hosoi et al.   APPLIED PHYSICS LETTERS

Nitrogen plasma cleaning of Ge(100) surfaces

(2009) Katsuhiro Kutsuki et al.   APPLIED SURFACE SCIENCE

Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2

(2008) M. Houssa et al.   APPLIED PHYSICS LETTERS

Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

(2008) Hiroshi Matsubara et al.   APPLIED PHYSICS LETTERS

Characteristics of Pure Ge3N4Dielectric Layers Formed by High-Density Plasma Nitridation

(2008) Katsuhiro Kutsuki et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics

(2008) Koji Kita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS