Investigation of carrier transport properties in semipolar (112¯2) GaN films with low defect density

Green Semipolar (202̄1̄) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth

(2013) Yuji Zhao et al.   Applied Physics Express

Highly stable blue-emission in semipolar (11-22) InGaN/GaN multi-quantum well light-emitting diode

(2013) Doo Soo Kim et al.   APPLIED PHYSICS LETTERS

Suppressing void defects in long wavelength semipolar (202¯1¯) InGaN quantum wells by growth rate optimization

(2013) Yuji Zhao et al.   APPLIED PHYSICS LETTERS

Defect Reduction in Semi-Polar (112̄2) Gallium Nitride Grown Using Epitaxial Lateral Overgrowth

(2013) Tongtong Zhu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Structural and electrical anisotropies of Si-doped a-plane (11–20) GaN films with different SiNx interlayers

(2013) Ji Hoon Kim et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar ($20\bar{2}\bar{1}$) Blue Light-Emitting Diodes

(2012) Chih-Chien Pan et al.   Applied Physics Express

High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes

(2012) Chih-Chien Pan et al.   Applied Physics Express

Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

(2012) Yuji Zhao et al.   APPLIED PHYSICS LETTERS

Carrier Transport Mechanism of a Low Resistance Ti/Al Ohmic Contact on ($11\bar{2}2$) Semipolar n-Type GaN

(2012) Sungmin Jung et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

(2012) David A. Browne et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Charge transport in non-polar and semi-polar III-V nitride heterostructures

(2012) Aniruddha Konar et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Semipolar GaN grown on foreign substrates: a review

(2012) F Scholz   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$

(2011) Yuji Zhao et al.   Applied Physics Express

Efficient blocking of planar defects by prismatic stacking faults in semipolar (112¯2)-GaN layers on m-sapphire by epitaxial lateral overgrowth

(2011) B. Lacroix et al.   APPLIED PHYSICS LETTERS

Charged basal stacking fault scattering in nitride semiconductors

(2011) Aniruddha Konar et al.   APPLIED PHYSICS LETTERS

Growth evolution and microstructural characterization of semipolar (112̄2) GaN selectively grown on etched r-plane sapphire

(2011) Benjamin Leung et al.   JOURNAL OF CRYSTAL GROWTH

Unintentional doping ofa-plane GaN by insertion ofin situSiN masks

(2011) H Witte et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

30-mW-Class High-Power and High-Efficiency Blue Semipolar (10\bar1\bar1) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique

(2010) Yuji Zhao et al.   Applied Physics Express

Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field

(2010) Grace D. Metcalfe et al.   Applied Physics Express

Effects of Basal Stacking Faults on Electrical Anisotropy of Nonpolar a-Plane ($11\bar{2}0$) GaN Light-Emitting Diodes on Sapphire Substrate

(2010) Kwang Hyeon Baik et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Characterization of unintentional doping in nonpolar GaN

(2010) Tongtong Zhu et al.   JOURNAL OF APPLIED PHYSICS

Stacking faults blocking process in (11−22) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

(2010) N. Kriouche et al.   JOURNAL OF CRYSTAL GROWTH

Defect structure in heteroepitaxial semipolar (11\bar {2} 2 ) (Ga, Al)N

(2010) Y Arroyo Rojas Dasilva et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Growth of Semipolar (11\bar22) GaN Layer by Controlling Anisotropic Growth Rates inr-Plane Patterned Sapphire Substrate

(2009) Narihito Okada et al.   Applied Physics Express

Improved semipolar (112¯2) GaN quality using asymmetric lateral epitaxy

(2009) P. de Mierry et al.   APPLIED PHYSICS LETTERS

Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayers

(2009) C. F. Johnston et al.   APPLIED PHYSICS LETTERS

Characterization of blue-green m-plane InGaN light emitting diodes

(2009) You-Da Lin et al.   APPLIED PHYSICS LETTERS

Improving microstructural quality of semipolar (112̱2) GaN on m-plane sapphire by a two-step growth process

(2009) Qian Sun et al.   APPLIED PHYSICS LETTERS

Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate

(2009) Sung-Min Hwang et al.   APPLIED PHYSICS LETTERS

Understanding x-ray diffraction of nonpolar gallium nitride films

(2009) M. A. Moram et al.   JOURNAL OF APPLIED PHYSICS

Basal Plane Stacking-Fault Related Anisotropy in X-ray Rocking Curve Widths ofm-Plane GaN

(2008) Melvin B. McLaurin et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Unintentional doping in GaN assessed by scanning capacitance microscopy

(2008) J. Sumner et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS