Basal plane stacking-fault related anisotropy in X-ray rocking curve widths of m-plane GaN

A model of basal plane stacking faults as boundaries between incoherently scattering domains in in-plane GaN films is reviewed. in-Plane GaN films are analyzed with a modified version of the Williamson-Hall analysis in order to determine the length-scale of coherent scattering and tilt-mosaic contribution to X-ray rocking curve widths for the primary in-plane directions. This analysis shows that basal plane stacking faults are the predominant source of rocking-curve width anisotropy in the in-plane films, and indicate that the modified Williamson-Hall analysis can be used as a non-destructive technique for measuring basal plane stacking fault densities in m-GaN films.