Semipolar InN/AlN multiple quantum wells on {101¯5} faceted AlN on silicon

Origin of the Variation of Exciton Binding Energy in Semiconductors

(2013) Marc Dvorak et al.   PHYSICAL REVIEW LETTERS

Carrier localization in InN/InGaN multiple-quantum wells with high In-content

(2012) S. Valdueza-Felip et al.   APPLIED PHYSICS LETTERS

Polarization-Induced pn Diodes in Wide-Band-Gap Nanowires with Ultraviolet Electroluminescence

(2012) Santino D. Carnevale et al.   NANO LETTERS

Elastic constants, composition, and piezolectric polarization in InxAl1−xN: Fromab initiocalculations to experimental implications for the applicability of Vegard's rule

(2012) M.-Y. Xie et al.   PHYSICAL REVIEW B

Polarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum Well

(2012) M. S. Miao et al.   PHYSICAL REVIEW LETTERS

Is electron accumulation universal at InN polar surfaces?

(2011)   APPLIED PHYSICS LETTERS

Three-Dimensional GaN/AlN Nanowire Heterostructures by Separating Nucleation and Growth Processes

(2011) Santino D. Carnevale et al.   NANO LETTERS

Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy

(2010) Wei Lin et al.   APPLIED PHYSICS LETTERS

In situ investigation of self-induced GaN nanowire nucleation on Si

(2010) C. Chèze et al.   APPLIED PHYSICS LETTERS

Molecular beam epitaxy growth and optical properties of AlN nanowires

(2010) O. Landré et al.   APPLIED PHYSICS LETTERS

Band Engineering in Strained GaN/ultrathin InN/GaN Quantum Wells

(2009) Wei Lin et al.   CRYSTAL GROWTH & DESIGN

Molecular beam epitaxy growth of wurtzite AlN nanotips

(2008) Kuang-Yuan Hsu et al.   APPLIED PHYSICS LETTERS

A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy

(2008) S. Fernández-Garrido et al.   APPLIED PHYSICS LETTERS

MOVPE growth and characterization of InN/GaN single and multi-quantum well structures

(2008) Abdul Kadir et al.   JOURNAL OF CRYSTAL GROWTH