Graphene-ferroelectric hybrid devices for multi-valued memory system
Published 2013 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Graphene-ferroelectric hybrid devices for multi-valued memory system
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 2, Pages 022903
Publisher
AIP Publishing
Online
2013-07-09
DOI
10.1063/1.4813264
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Graphene–Ferroelectric Hybrid Structure for Flexible Transparent Electrodes
- (2012) Guang-Xin Ni et al. ACS Nano
- Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone
- (2012) Srikar Jandhyala et al. ACS Nano
- Transport properties of graphene nanoribbon transistors on chemical-vapor-deposition grown wafer-scale graphene
- (2012) Wan Sik Hwang et al. APPLIED PHYSICS LETTERS
- Low-κ organic layer as a top gate dielectric for graphene field effect transistors
- (2012) G. Mordi et al. APPLIED PHYSICS LETTERS
- Unipolar transport in bilayer graphene controlled by multiple p-n interfaces
- (2012) Hisao Miyazaki et al. APPLIED PHYSICS LETTERS
- Long-term retention in organic ferroelectric-graphene memories
- (2012) Santosh Raghavan et al. APPLIED PHYSICS LETTERS
- Angle-Dependent Carrier Transmission in Graphene p–n Junctions
- (2012) S. Sutar et al. NANO LETTERS
- State-of-the-Art Graphene High-Frequency Electronics
- (2012) Yanqing Wu et al. NANO LETTERS
- Theory of interfacial plasmon-phonon scattering in supported graphene
- (2012) Zhun-Yong Ong et al. PHYSICAL REVIEW B
- Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
- (2012) H. Yang et al. SCIENCE
- Effect of graphene layers on the thermomechanical behaviour of a NiTi shape memory alloy during the nanoscale phase transition
- (2012) Abbas Amini et al. SCRIPTA MATERIALIA
- Issues with characterizing transport properties of graphene field effect transistors
- (2012) Archana Venugopal et al. SOLID STATE COMMUNICATIONS
- Robust bi-stable memory operation in single-layer graphene ferroelectric memory
- (2011) Emil B. Song et al. APPLIED PHYSICS LETTERS
- Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices
- (2010) B. Lee et al. APPLIED PHYSICS LETTERS
- Fully Integrated Graphene and Carbon Nanotube Interconnects for Gigahertz High-Speed CMOS Electronics
- (2010) Xiangyu Chen et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Polarization behavior of poly(vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for nonvolatile memory application in flexible electronics
- (2010) D. Mao et al. JOURNAL OF APPLIED PHYSICS
- Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature
- (2010) Fengnian Xia et al. NANO LETTERS
- Roll-to-roll production of 30-inch graphene films for transparent electrodes
- (2010) Sukang Bae et al. Nature Nanotechnology
- Graphene Field-Effect Transistors with Ferroelectric Gating
- (2010) Yi Zheng et al. PHYSICAL REVIEW LETTERS
- Gate-controlled nonvolatile graphene-ferroelectric memory
- (2009) Yi Zheng et al. APPLIED PHYSICS LETTERS
- Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric
- (2009) Seyoung Kim et al. APPLIED PHYSICS LETTERS
- Conductance Asymmetry of Graphene p-n Junction
- (2009) Tony Low et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
- (2008) A. Das et al. Nature Nanotechnology
- Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors
- (2008) X. Li et al. SCIENCE
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now