Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors

Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates

(2012) Jun Wu et al.   APPLIED PHYSICS LETTERS

Correlated Flicker Noise and Hole Mobility Characteristics of $(\hbox{110})/\langle\hbox{110}\rangle$ Uniaxially Strained SiGe FINFETs

(2012) Bijesh Rajamohanan et al.   IEEE ELECTRON DEVICE LETTERS

1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors

(2012) C. J. Delker et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Uniform and position-controlled InAs nanowires on 2′′Si substrates for transistor applications

(2011) Sepideh Gorji Ghalamestani et al.   NANOTECHNOLOGY

Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates

(2010) Tomotaka Tanaka et al.   Applied Physics Express

Low-Frequency Noise in Vertical InAs Nanowire FETs

(2010) Karl-Magnus Persson et al.   IEEE ELECTRON DEVICE LETTERS

Doping Incorporation in InAs nanowires characterized by capacitance measurements

(2010) Gvidas Astromskas et al.   JOURNAL OF APPLIED PHYSICS

A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters

(2009) Ali Khakifirooz et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Spatial localization of 1/f noise sources in AlSb/InAs high-electron-mobility transistors

(2009) Petru Andrei et al.   JOURNAL OF APPLIED PHYSICS

Temperature dependence of the low frequency noise in indium arsenide nanowire transistors

(2008) M. R. Sakr et al.   APPLIED PHYSICS LETTERS

Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric

(2008) Ning Li et al.   APPLIED PHYSICS LETTERS