Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates

Published 2010 View Full Article

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Title
Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates
Authors
Keywords
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Journal
Applied Physics Express
Volume 3, Issue 2, Pages 025003
Publisher
IOP Publishing
Online
2010-01-29
DOI
10.1143/apex.3.025003

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