W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention

Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications

(2012) Yegang Lu et al.   APPLIED PHYSICS LETTERS

Enabling Universal Memory by Overcoming the Contradictory Speed and Stability Nature of Phase-Change Materials

(2012) Weijie Wang et al.   Scientific Reports

Mechanism of Oxidation on Si2Sb2Te5Phase Change Material and Its Application

(2011) Ting Zhang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

The use of Ga16Sb84 alloy for electronic phase-change memory

(2011) Chih-Chung Chang et al.   SCRIPTA MATERIALIA

Nano composite Si2Sb2Te film for phase change memory

(2011) Feng Rao et al.   THIN SOLID FILMS

Phase Change Memory

(2010) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Study on the crystallization behaviors of Si2Sb2Tex materials

(2010) Kun Ren et al.   SCRIPTA MATERIALIA

Ga2Te3Sb5-A Candidate for Fast and Ultralong Retention Phase-Change Memory

(2009) Kin-Fu Kao et al.   ADVANCED MATERIALS

Impact of incomplete set programing on the performance of phase change memory cell

(2008) Der-Sheng Chao et al.   APPLIED PHYSICS LETTERS

Effects of excess Sb on crystallization of δ-phase SbTe binary thin films

(2008) Min Soo Youm et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE