Article
Physics, Applied
Benoit Sklenard, Francois Triozon, Chiara Sabbione, Lavinia Nistor, Michel Frei, Gabriele Navarro, Jing Li
Summary: This study investigates the electronic and thermal properties of GeTe/Sb2Te3 superlattices, finding small resistive contrast among different phases and low out-of-plane lattice thermal conductivity related to the number of VdW gaps. The findings highlight the importance of thermal improvement in GeTe/Sb2Te3 superlattice devices.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Multidisciplinary
Yang Qiao, Jin Zhao, Haodong Sun, Zhitang Song, Yuan Xue, Jiao Li, Sannian Song
Summary: Thermal stability and operation speed are the bottlenecks in the development of phase change memory. This paper explores the use of platinum doping to improve PCM performance, resulting in higher data retention temperature and operation speed through reduced grain size and density change rate.
Article
Materials Science, Multidisciplinary
Damien Terebenec, Niccolo Castellani, Nicolas Bernier, Vitomir Sever, Philippe Kowalczyk, Mathieu Bernard, Marie-Claire Cyrille, Nguyet-Phuong Tran, Francoise Hippert, Pierre Noe
Summary: The study investigates the integration of GeTe/Sb2Te3 superlattices obtained by sputtering into phase-change memory devices, confirming high structural quality through X-ray diffraction and STEM imaging. Statistical analysis shows that the RESET current is lower in SL devices compared to GeTe reference devices, and decreases with increasing Sb2Te3 layer thickness in the SL.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2021)
Article
Chemistry, Physical
Jin Zhao, Zhenhui Yuan, Wen-Xiong Song, Zhitang Song
Summary: This study investigates the strategy of doping to improve the performance of phase-change memory, choosing erbium as the dopant to enhance operation speed and data retention. The designed EST phase-change memory meets the requirements and provides general doping rules for better comprehensive performance.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Computer Science, Hardware & Architecture
Yi-Shen Chen, Yuan-Hao Chang, Tei-Wei Kuo
Summary: This study proposes a drift-tolerant coding scheme, DTC, for multi-level-cell phase-change memory (MLC PCM) to achieve fast write operations without sacrificing data accuracy. By exploiting resistance drift and asymmetric write characteristics of PCM cells, DTC significantly reduces write latency and energy consumption. Additionally, a segmentation strategy and an elimination methodology are introduced to further improve write performance.
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
(2023)
Article
Chemistry, Physical
E. Nolot, C. Sabbione, W. Pessoa, L. Prazakova, G. Navarro
Summary: The structural features and electrical properties of thin materials developed for phase change memory are highly influenced by stoichiometry and binding states. Chemical state X-ray photoelectron spectroscopic analysis of materials such as GeTe, Sb2Te3, and GST is challenging due to overlapping binding energies when samples are exposed to air. Quasi in situ XPS has been used to characterize PCM materials and investigate the influence of nitrogen and air exposure on their binding states.
APPLIED SURFACE SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
Riduan Khaddam-Aljameh, Michele Martemucci, Benedikt Kersting, Manuel Le Gallo, Robert L. Bruce, Matthew BrightSky, Abu Sebastian
Summary: By designing unit-cell arrays and implementing diagonal connections, we have successfully addressed challenges such as parallel writing and computational precision in memristive crossbar arrays.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
(2021)
Article
Multidisciplinary Sciences
Jingon Jang, Seonghoon Jang, Sanghyeon Choi, Gunuk Wang
Summary: By implementing additional filter evaluation and a simple run-off election-based decision rule in artificial neural network systems, confusion is reduced and training and inference performance is improved, leading to increased classification accuracy of the data set.
SCIENTIFIC REPORTS
(2021)
Article
Materials Science, Multidisciplinary
Lun Wang, Zixuan Liu, Zhuoran Zhang, Jiangxi Chen, Jinyu Wen, Ruizhe Zhao, Hao Tong, Xiangshui Miao
Summary: In this study, a refresh operation is proposed to solve the poor thermal stability issue of OTS selectors based on GeTe. The switching performance of GeTe selectors can be fully restored to the original level by the refresh operation and exhibit good consistency, making them applicable in the BEOL process. Furthermore, the endurance of the device is significantly improved after applying the refresh operation. The effectiveness of this refresh operation is also verified for OTS devices based on the commonly used GeSe system, suggesting its wide applicability to other OTS devices.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Physics, Applied
Chong Qiao, Shengzhao Wang, Lanli Chen, Bin Liu, Shouyan Bai, Rongchuan Gu, Songyou Wang, Cai-Zhuang Wang, Kai-Ming Ho, Xiangshui Miao, Ming Xu
Summary: This study investigates the structure and electronic characteristics of amorphous GeS using ab initio molecular dynamics simulations. The results reveal that amorphous GeS is mainly composed of Ge-S bonds, with Ge- and S-centered clusters predominantly in the form of octahedral structures in liquid GeS. During the amorphization process, most Ge-centered clusters become highly coordinated octahedrons or tetrahedrons, while S-centered clusters gradually deviate from the octahedral structure. These structural features result in a high switching voltage in amorphous GeS.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Feilong Ding, Deqi Dong, Yihan Chen, Xinnan Lin, Lining Zhang
Summary: A robust simulation framework for nanoscale phase change memory (PCM) cells was developed, capturing the evolution of cluster populations through dynamic nucleation simulation and an improved crystallization model to accommodate non-uniform critical sizes of nuclei. The developed simulation method has significant implications for PCM fast SET programming and retention. This work provides possibilities for further improvement of PCM and integration with CMOS technology.
Article
Physics, Multidisciplinary
Wan-Liang Liu, Ying Chen, Tao Li, Zhi-Tang Song, Liang-Cai Wu
Summary: Doping Mo into SbTe improves its thermal stability, with Mo-doped Sb2Te3 (MST) showing better thermal stability and faster crystallization time in PCM applications. The endurance of up to 4 x 10^5 cycles and resistance ratio of more than one order of magnitude make MST a promising candidate for PCM applications.
Article
Chemistry, Physical
Jing Hu, Cong Lin, Liyu Peng, Tao Wei, Wanfei Li, Yun Ling, Qianqian Liu, Miao Cheng, Sannian Song, Zhitang Song, Jian Zhou, Yan Cheng, Yonghui Zheng, Zhimei Sun, Bo Liu
Summary: Transition metal doping, such as Cr doping, is an effective strategy to improve the properties of phase-change random access memory (PCRAM). In this study, a Cr-doped Sb2Te film was fabricated and the enhancement mechanism of Cr doping was investigated through experiments and calculations. The results showed that Cr atoms preferentially substituted the Sb1 site, improving the crystalline phase stability and crystallization temperature. In addition, in the amorphous phase, Cr atoms formed tight clusters, resulting in a faster phase-change speed.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Chemistry, Multidisciplinary
Jiabin Shen, Wenxiong Song, Kun Ren, Zhitang Song, Peng Zhou, Min Zhu
Summary: Phase-change memory (PCM), with its significantly improved programming speed, has the potential to revolutionize data-storage technology. Through analysis of discovered phase-change materials and simulations, Sb-based PCM is predicted to have a superfast crystallization speed, achieving record-fast speeds in 60 nm-size devices. These findings open up opportunities for developing dynamic random-access memory (DRAM)-like and cache-like PCM using appropriate storage materials.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Physical
Jin Zhao, Zhenhui Yuan, Xiaodan Li, Wen-Xiong Song, Zhitang Song
Summary: This study investigates Er-alloyed Sb/Te binary materials and finds that they exhibit high-speed writing capability. The impurity Er enhances the ability to form amorphous structures in Sb/Te, thereby improving device performance.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Chemistry, Multidisciplinary
Yuan-Ming Chang, Shih-Hsien Yang, Che-Yi Lin, Chang-Hung Chen, Chen-Hsin Lien, Wen-Bin Jian, Keiji Ueno, Yuen-Wuu Suen, Kazuhito Tsukagoshi, Yen-Fu Lin
ADVANCED MATERIALS
(2018)
Article
Engineering, Electrical & Electronic
Jih-Chien Liao, Ting-Chang Chang, Wei-Ren Syong, Kai-Chun Chang, Ying-Hsin Lu, Hsi-Wen Liu, Chien-Yu Lin, Li-Hui Chen, Fu-Yuan Jin, Yu-Hsuan Chen, Chen-Hsin Lien, Osbert Cheng, Cheng-Tung Huang, Yi-Han Ye
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2018)
Article
Chemistry, Multidisciplinary
Mengjiao Li, Che-Yi Lin, Shih-Hsien Yang, Yuan-Ming Chang, Jen-Kuei Chang, Feng-Shou Yang, Chaorong Zhong, Wen-Bin Jian, Chen-Hsin Lien, Ching-Hwa Ho, Heng-Jui Liu, Rong Huang, Wenwu Li, Yen-Fu Lin, Junhao Chu
ADVANCED MATERIALS
(2018)
Article
Chemistry, Multidisciplinary
Fei Xue, Weijin Hu, Ko-Chun Lee, Li-Syuan Lu, Junwei Zhang, Hao-Ling Tang, Ali Han, Wei-Ting Hsu, Shaobo Tu, Wen-Hao Chang, Chen-Hsin Lien, Jr-Hau He, Zhidong Zhang, Lain-Jong Li, Xixiang Zhang
ADVANCED FUNCTIONAL MATERIALS
(2018)
Article
Nanoscience & Nanotechnology
Shih-Hsien Yang, You-Teng Yao, Yong Xu, Che-Yi Lin, Yuan-Ming Chang, Yuen-Wuu Suen, Huabin Sun, Chen-Hsin Lien, Wenwu Li, Yen-Fu Lin
Article
Chemistry, Multidisciplinary
Mengjiao Li, Feng-Shou Yang, Yung-Chi Hsiao, Che-Yi Lin, Hsing-Mei Wu, Shih-Hsien Yang, Hao-Ruei Li, Chen-Hsin Lien, Ching-Hwa Ho, Heng-Jui Liu, Wenwu Li, Yen-Fu Lin, Ying-Chih Lai
ADVANCED FUNCTIONAL MATERIALS
(2019)
Article
Chemistry, Multidisciplinary
Ko-Chun Lee, Shih-Hsien Yang, Yung-Shang Sung, Yuan-Ming Chang, Che-Yi Lin, Feng-Shou Yang, Mengjiao Li, Kenji Watanabe, Takashi Taniguchi, Ching-Hwa Ho, Chen-Hsin Lien, Yen-Fu Lin
ADVANCED FUNCTIONAL MATERIALS
(2019)
Article
Engineering, Electrical & Electronic
Kai-Chun Chang, Jih-Chien Liao, Ting-Chang Chang, Chien-Hung Yeh, Chien-Yu Lin, Fu-Yuan Jin, Yu-Shan Lin, Fong-Min Ciou, Wei-Chun Hung, Yun-Hsuan Lin, Chen-Hsin Lien, Osbert Cheng, Cheng-Tung Huang, Yi-Han Ye
IEEE ELECTRON DEVICE LETTERS
(2019)
Article
Nanoscience & Nanotechnology
Tsung-Han Tsai, Feng-Shou Yang, Po-Hsun Ho, Zheng-Yong Liang, Chen-Hsin Lien, Ching-Hwa Ho, Yen-Fu Lin, Po-Wen Chiu
ACS APPLIED MATERIALS & INTERFACES
(2019)
Article
Nanoscience & Nanotechnology
Shih-Hsien Yang, Che-Yi Lin, Yuan-Ming Chang, Mengjiao Li, Ko-Chun Lee, Ciao-Fen Chen, Feng-Shou Yang, Chen-Hsin Lien, Keiji Ueno, Kenji Watanabe, Takashi Taniguchi, Kazuhito Tsukagoshi, Yen-Fu Lin
ACS APPLIED MATERIALS & INTERFACES
(2019)
Article
Engineering, Electrical & Electronic
Shih-Kai Lin, Min-Chen Chen, Ting-Chang Chang, Chen-Hsin Lien, Jing-Shuen Chang, Cheng-Hsien Wu, Yi-Ting Tseng, You-Lin Xu, Kai-Lin Huang, Li-Chuan Sun, Yong-Ci Zhang, Yu-Ju Chiu, Simon M. Sze
IEEE ELECTRON DEVICE LETTERS
(2019)
Article
Physics, Applied
Jingjing Shao, Wan-Ching Su, Ting-Chang Chang, Hong-Chih Chen, Kuan-Ju Zhou, I-Nien Lu, Yu-Fa Tu, Yu-Shan Shih, Tsung-Ming Tsai, Chen-Hsin Lien, Jianwen Yang, Qun Zhang
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2020)
Article
Chemistry, Physical
Shih-Hsien Yang, Ko-Chun Lee, Meng-Yu Tsai, Yuan-Ming Chang, Che-Yi Lin, Feng-Shou Yang, Kenji Watanabe, Takashi Taniguchi, Chen-Hsin Lien, Ching-Hwa Ho, Mengjiao Li, Yen-Fu Lin, Ying-Chih Lai
Proceedings Paper
Engineering, Electrical & Electronic
Yu-Hsuan Chen, Chun-Hsing Shih, Hung-Jin Teng, Chenhsin Lien
2019 SILICON NANOELECTRONICS WORKSHOP (SNW)
(2019)
Article
Chemistry, Multidisciplinary
Hao-Ling Tang, Ming-Hui Chiu, Chien-Chih Tseng, Shih-Hsien Yang, Kuan-Jhih Hou, Sung-Yen Wei, Jing-Kai Huang, Yen-Fu Lin, Chen-Hsin Lien, Lain-Jong Li