Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 50, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.50.020202
Keywords
-
Categories
Funding
- Chinese Academy of Sciences [083YQA1001]
- National Natural Science Foundation of China [61006087]
- National Integrated Circuit Research Program of China [2009ZX02023-3]
- National Basic Research Program of China [2007CB935400, 2010CB934300, 2011CB309602]
- Alexander von Humboldt-Stiftung (AvH, Germany)
Ask authors/readers for more resources
Uniformly oxygen doping into phase change materials (PCMs) will increase their crystallization temperatures, but natural oxidation of PCMs has an opposite effect. Mechanism of oxidation for Si2Sb2Te5 was studied by in situ X-ray photoelectron spectroscopy, employing an oxygen content gradient sample. During an oxidation process, oxygen preferentially reacts with Si due to its smallest electronegativity value among Si, Sb, and Te elements. Models have been proposed for the different mechanisms of oxidation. O-doping into Si-Sb-Te was proposed to prepare nano-crystal PCM based on the discovering. Performance of nano-crystal material and memory device was effectively promoted. (C) 2011 The Japan Society of Applied Physics
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
