Electron band alignment at the interface of (100)InSb with atomic-layer deposited Al2O3

Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors

(2012) Ze Yuan et al.   APPLIED PHYSICS LETTERS

Nanoscale InGaSb Heterostructure Membranes on Si Substrates for High Hole Mobility Transistors

(2012) Kuniharu Takei et al.   NANO LETTERS

Characterization of Al2O3/InSb/Si MOS diodes having various InSb thicknesses grown on Si(1 1 1) substrates

(2012) Azusa Kadoda et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Room temperature ballistic transport in InSb quantum well nanodevices

(2011) A. M. Gilbertson et al.   APPLIED PHYSICS LETTERS

Transitivity of band offsets between semiconductor heterojunctions and oxide insulators

(2011) V. V. Afanas’ev et al.   APPLIED PHYSICS LETTERS

Room temperature device performance of electrodeposited InSb nanowire field effect transistors

(2011) Suprem R. Das et al.   APPLIED PHYSICS LETTERS

Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications

(2011) C.L. Hinkle et al.   CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE

InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design

(2011) Aneesh Nainani et al.   JOURNAL OF APPLIED PHYSICS

Band offsets at the (100)GaSb/Al2O3 interface from internal electron photoemission study

(2011) V.V. Afanas’ev et al.   MICROELECTRONIC ENGINEERING

Experimental electronic structure of In2O3and Ga2O3

(2011) Christoph Janowitz et al.   NEW JOURNAL OF PHYSICS

An in situ examination of atomic layer deposited alumina/InAs(100) interfaces

(2010) A. P. Kirk et al.   APPLIED PHYSICS LETTERS

Electron band alignment between (100)InP and atomic-layer deposited Al2O3

(2010) Hsing-Yi Chou et al.   APPLIED PHYSICS LETTERS

Temperature dependent properties of InSb and InAs nanowire field-effect transistors

(2010) Henrik A. Nilsson et al.   APPLIED PHYSICS LETTERS

Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

(2010) A. Ali et al.   APPLIED PHYSICS LETTERS

Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-κ insulators

(2010) Yan Zhang et al.   JOURNAL OF APPLIED PHYSICS

Low-Voltage Tunnel Transistors for Beyond CMOS Logic

(2010) Alan C. Seabaugh et al.   PROCEEDINGS OF THE IEEE

Energy barriers at interfaces between (100) InxGa1−xAs (0≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2

(2009) V. V. Afanas’ev et al.   APPLIED PHYSICS LETTERS

Interband transitions of InAsxSb1−x alloy films

(2009) T. J. Kim et al.   APPLIED PHYSICS LETTERS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Interfacial Cleaning Effects in Passivating InSb with Al[sub 2]O[sub 3] by Atomic Layer Deposition

(2008) C. H. Hou et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy

(2008) Aron Walsh et al.   PHYSICAL REVIEW LETTERS