Temperature dependent properties of InSb and InAs nanowire field-effect transistors

Study of a Single InSb Nanowire Fabricated via DC Electrodeposition in Porous Templates

(2009) M. Ibrahim Khan et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Giant, Level-DependentgFactors in InSb Nanowire Quantum Dots

(2009) Henrik A. Nilsson et al.   NANO LETTERS

InAs/InSb nanowire heterostructures grown by chemical beam epitaxy

(2009) Daniele Ercolani et al.   NANOTECHNOLOGY

InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch

(2009) Philippe Caroff et al.   NANOTECHNOLOGY

High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts

(2008) Jia Feng et al.   IEEE ELECTRON DEVICE LETTERS

Performance of $n$-Type InSb and InAs Nanowire Field-Effect Transistors

(2008) M. Abul Khayer et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates

(2008) Carl Rehnstedt et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High‐Quality InAs/InSb Nanowire Heterostructures Grown by Metal–Organic Vapor‐Phase Epitaxy

(2008) Philippe Caroff et al.   Small