Photoexcited carrier dynamics in AlInN/GaN heterostructures

Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al$_{0.82}$In$_{0.18}$N Grown on GaN

(2011) Roy B. Chung et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy

(2011) A. Pinos et al.   JOURNAL OF APPLIED PHYSICS

Migration-enhanced metal–organic chemical vapor deposition of AlxIn1−xN/GaN heterostructures (x>0.75) on c-plane sapphire

(2011) Daniel Billingsley et al.   JOURNAL OF CRYSTAL GROWTH

High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD

(2011) C M Wu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Indium segregation in AlInN/AlN/GaN heterostructures

(2010) A. Minj et al.   APPLIED PHYSICS LETTERS

Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy

(2010) V. Liuolia et al.   APPLIED PHYSICS LETTERS

Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells

(2010) Vytautas Liuolia et al.   JOURNAL OF APPLIED PHYSICS

Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures

(2010) Faisal Sudradjat et al.   JOURNAL OF APPLIED PHYSICS

Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

(2010) E Sakalauskas et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy

(2009) Th. Kehagias et al.   APPLIED PHYSICS LETTERS

The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures

(2009) A Teke et al.   NEW JOURNAL OF PHYSICS

Influence of indium clustering on the band structure of semiconducting ternary and quaternary nitride alloys

(2009) I. Gorczyca et al.   PHYSICAL REVIEW B