Journal
JOURNAL OF CRYSTAL GROWTH
Volume 327, Issue 1, Pages 98-101Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2011.06.015
Keywords
Metal-organic chemical vapor deposition; Nitrides; Semiconducting III-V materials
Funding
- Missile Defense Agency (MDA) [HQ000610C7402, W9113M10C0077]
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The growth and the characterization of AlxIn1-xN/GaN (x > 0.75) heterostructures by migration-enhanced metal-organic chemical vapor deposition are optimized through variations in growth temperature and precursor modulation schemes, resulting in high quality films. AlxIn1-xN/GaN heterostructures were characterized by XRD reciprocal space mapping in order to calculate the relative strain to GaN as a function of indium composition. AFM measurements yielded an rms roughness value of similar to 4 angstrom. By controlling indium incorporation, a maximum 2DEG mobility of similar to 1270 cm(2)/V s, a maximum sheet charge density of similar to 4.1 x 10(13) cm(-2), and a minimum sheet resistance of 179.9 Omega/square were obtained. (C) 2011 Elsevier B.V. All rights reserved.
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