Indium segregation in AlInN/AlN/GaN heterostructures

Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy

(2010) H. Tang et al.   JOURNAL OF APPLIED PHYSICS

The structure of InAlN/GaN heterostructures for high electron mobility transistors

(2010) A. Vilalta-Clemente et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Distinction of heterogeneity on Au nanostructured surface based on phase contrast imaging of atomic force microscopy

(2010) Mi Jung et al.   ULTRAMICROSCOPY

Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy

(2009) Th. Kehagias et al.   APPLIED PHYSICS LETTERS

Electrical properties of pinholes in GaN:Mn epitaxial films characterized by conductive AFM

(2009) M. Herrera et al.   SUPERLATTICES AND MICROSTRUCTURES

Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

(2008) M. Gonschorek et al.   JOURNAL OF APPLIED PHYSICS

Influence of electron irradiation on the electronic transport mechanisms during the conductive AFM imaging of InAs/GaAs quantum dots capped with a thin GaAs layer

(2008) M Troyon et al.   NANOTECHNOLOGY