Investigation of carbon interstitials with varied SiO2 thickness in HfO2/SiO2/4H-SiC structure

Interface engineering of epitaxial graphene on SiC(0001¯) via fluorine intercalation: A first principles study

(2012) Chen Si et al.   APPLIED PHYSICS LETTERS

Identification of a major cause of endemically poor mobilities in SiC/SiO2 structures

(2011) Xiao Shen et al.   APPLIED PHYSICS LETTERS

Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices

(2011) J. R. Weber et al.   JOURNAL OF APPLIED PHYSICS

Unpinned Interface Between Al[sub 2]O[sub 3] Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In[sub 0.53]Ga[sub 0.47]As(001)

(2009) Byungha Shin et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Energy-band alignment of HfO2∕SiO2∕SiC gate dielectric stack

(2008) R. Mahapatra et al.   APPLIED PHYSICS LETTERS

Transition layers at the SiO2∕SiC interface

(2008) Tsvetanka Zheleva et al.   APPLIED PHYSICS LETTERS

Admittance study of GaAs high-k metal-insulator-semiconductor capacitors with Si interface control layer

(2008) Masamichi Akazawa et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B