Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3553786
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- NSF GOALI [DMR-0907385]
- McMinn Endowment at Vanderbilt University
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Poor electron mobility at SiC/SiO2 interfaces has long held up the development of SiC-based power devices. The mobility degradation has been attributed to defects at the interface and the oxide as in the case of the Si/SiO2 system, but a decade of research has led only to limited improvement. Here we examine theoretical results and available experimental evidence and show that thermal oxidation generates immobile carbon di-interstitial defects inside the semiconductor substrate and that they are a major cause of the poor mobility in SiC/SiO2 structures. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3553786]
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