On the alleviation of Fermi-level pinning by ultrathin insulator layers in Schottky contacts

Suppression of in-plane tunneling anisotropic magnetoresistance effect in Co2MnSi/MgO/n-GaAs and CoFe/MgO/n-GaAs junctions by inserting a MgO barrier

(2011) Takafumi Akiho et al.   APPLIED PHYSICS LETTERS

Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

(2011) Nicolas Reckinger et al.   APPLIED PHYSICS LETTERS

Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height

(2011) J.-Y. Jason Lin et al.   APPLIED PHYSICS LETTERS

Bandstructure line-up of epitaxial Fe/MgO/Ge heterostructures: A combined x-ray photoelectron spectroscopy and transport study

(2011) M. Cantoni et al.   APPLIED PHYSICS LETTERS

Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO2 interfacial layer with low tunneling resistance

(2011) Ze Yuan et al.   APPLIED PHYSICS LETTERS

Reducing Schottky barrier height for Fe/n-GaAs junction by inserting thin GaOx layer

(2011) H. Saito et al.   JOURNAL OF APPLIED PHYSICS

Branch-point energies and the band-structure lineup at Schottky contacts and heterostrucures

(2011) Winfried Mönch   JOURNAL OF APPLIED PHYSICS

Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers

(2011) R. R. Lieten et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Schottky and tunneling behavior of Fe/MgO/Ge(100) structures

(2010) J.-B. Laloë et al.   APPLIED PHYSICS LETTERS

Single crystalline CoFe/MgO tunnel contact on nondegenerate Ge with a proper resistance-area product for efficient spin injection and detection

(2010) Kun-Rok Jeon et al.   APPLIED PHYSICS LETTERS

Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films

(2010) Yi Zhou et al.   APPLIED PHYSICS LETTERS

The influence of Fermi level pinning/depinning on the Schottky barrier height and contact resistance in Ge/CoFeB and Ge/MgO/CoFeB structures

(2010) Donkoun Lee et al.   APPLIED PHYSICS LETTERS

Metal/III-V Schottky barrier height tuning for the design of nonalloyed III-V field-effect transistor source/drain contacts

(2010) Jenny Hu et al.   JOURNAL OF APPLIED PHYSICS

Contact engineering for organic semiconductor devices via Fermi level depinning at the metal-organic interface

(2010) Zihong Liu et al.   PHYSICAL REVIEW B

Near band edge Schottky barrier height modulation using high-κ dielectric dipole tuning mechanism

(2009) B. E. Coss et al.   APPLIED PHYSICS LETTERS

Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application

(2009) Masaharu Kobayashi et al.   JOURNAL OF APPLIED PHYSICS

A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film

(2008) Tomonori Nishimura et al.   Applied Physics Express

Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide

(2008) Yi Zhou et al.   APPLIED PHYSICS LETTERS

Ohmic contact formation on n-type Ge

(2008) R. R. Lieten et al.   APPLIED PHYSICS LETTERS