Ti-electrode effects of NiO based resistive switching memory with Ni insertion layer

Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches

(2011) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments

(2011) Gun Hwan Kim et al.   APPLIED PHYSICS LETTERS

A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors

(2011) B. Chen et al.   IEEE ELECTRON DEVICE LETTERS

Floating-Gate Coupling Canceller for Multi-Level Cell NAND Flash

(2011) Donghyuk Park et al.   IEEE TRANSACTIONS ON MAGNETICS

SiO2doped Ge2Sb2Te5thin films with high thermal efficiency for applications in phase change random access memory

(2011) Seung Wook Ryu et al.   NANOTECHNOLOGY

Reduction in reset current of unipolar NiO-based resistive switching through nickel interfacial layer

(2010) Hyung Dong Lee et al.   APPLIED PHYSICS LETTERS

Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching

(2010) In Kyeong Yoo et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

(2008) K. Kinoshita et al.   APPLIED PHYSICS LETTERS