De-embedding parasitic elements of GaN nanowire metal semiconductor field effect transistors by use of microwave measurements

Title
De-embedding parasitic elements of GaN nanowire metal semiconductor field effect transistors by use of microwave measurements
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 22, Pages 223109
Publisher
AIP Publishing
Online
2011-06-05
DOI
10.1063/1.3597408

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