High frequency characterization of a Schottky contact to a GaN nanowire bundle

A two-port GaN nanowire (NW) device with one Schottky contact and one Ohmic contact was characterized up to 10 GHz using on-wafer microwave measurements. In addition to the measurement of the broadband response, two additional applications of microwave measurements are introduced: (1) the capability to distinguish a Schottky-type contact from an Ohmic contact based on the reflected broadband signals (S-11 and S-22) and (2) the measurement of a capacitance voltage (CV) curve for a Schottky contact to a bundle of a few NWs. The junction capacitance of the Schottky contact is determined at various bias voltages by fitting the broadband response with a microwave circuit model. The carrier concentration is estimated from the resulting CV curve to be 5.3 X 10(18)/cm(3) and the Schottky barrier height is estimated to be 0.89 eV. (c) 2010 American Institute of Physics. [doi:10.1063/1.3428391]