Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

1/f noise of Sb-based p-channel HFETs

(2008) W. Kruppa et al.   ELECTRONICS LETTERS

Lateral and Vertical Scaling of $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ HEMTs for Post-Si-CMOS Logic Applications

(2008) Dae-Hyun Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications

(2008) J. B. BOOS et al.   IEICE TRANSACTIONS ON ELECTRONICS

Metamorphic high electron mobility Te-doped AlInSb/GaInSb heterostructures on InP (001)

(2008) G. Delhaye et al.   JOURNAL OF APPLIED PHYSICS

Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors

(2008) Brian R. Bennett et al.   JOURNAL OF CRYSTAL GROWTH

InSb quantum-well structures for electronic device applications

(2008) M. Edirisooriya et al.   JOURNAL OF CRYSTAL GROWTH

Integration of enhancement/depletion- mode InGaP/InGaAs doped-channel pseudomorphic HFETs for direct-coupled FET logic application

(2008) Jung-Hui Tsai et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY