Extraction of correct Schottky barrier height of sulfur implanted NiSi/n-Si junctions: Junction doping rather than barrier height lowering

Published 2011 View Full Article

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Title
Extraction of correct Schottky barrier height of sulfur implanted NiSi/n-Si junctions: Junction doping rather than barrier height lowering
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 1, Pages 012114
Publisher
AIP Publishing
Online
2011-07-12
DOI
10.1063/1.3609874
References
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