Extraction of correct Schottky barrier height of sulfur implanted NiSi/n-Si junctions: Junction doping rather than barrier height lowering

标题
Extraction of correct Schottky barrier height of sulfur implanted NiSi/n-Si junctions: Junction doping rather than barrier height lowering
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 99, Issue 1, Pages 012114
出版商
AIP Publishing
发表日期
2011-07-12
DOI
10.1063/1.3609874

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