Interfacial layer dependence on device property of high-κ TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness

Published 2009 View Full Article

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Title
Interfacial layer dependence on device property of high-κ TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 21, Pages 212105
Publisher
AIP Publishing
Online
2009-11-25
DOI
10.1063/1.3265947
References
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