Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

标题
Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 97, Issue 11, Pages 112905
出版商
AIP Publishing
发表日期
2010-09-17
DOI
10.1063/1.3490710

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