Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer

Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO[sub 2]

(2009) W. J. Maeng et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

(2008) P. D. Kirsch et al.   APPLIED PHYSICS LETTERS

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

(2008) Kunihiko Iwamoto et al.   APPLIED PHYSICS LETTERS

Effective Work Function Control With Aluminum Postdoping in the Ni Silicide/HfSiON Systems

(2008) Y. Tsuchiya et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation

(2008) W. J. Maeng et al.   JOURNAL OF APPLIED PHYSICS

Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion

(2008) K. Kakushima et al.   SOLID-STATE ELECTRONICS