Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors

Published 2010 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 11, Pages 113506
Publisher
AIP Publishing
Online
2010-03-16
DOI
10.1063/1.3364134
References
View 5 related references

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.