Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors

标题
Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 96, Issue 11, Pages 113506
出版商
AIP Publishing
发表日期
2010-03-16
DOI
10.1063/1.3364134

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