The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of $\hbox{HfO}_{2}$ MOSFET Devices

Published 2008 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of $\hbox{HfO}_{2}$ MOSFET Devices
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 29, Issue 1, Pages 54-56
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2008-01-09
DOI
10.1109/led.2007.911992

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.