Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3097810
Keywords
annealing; cobalt compounds; nanofabrication; oxidation; protective coatings; random-access storage; sputtering; transmission electron microscopy; X-ray photoelectron spectra
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Funding
- National Science Council of the Republic of China [NSC 97-2112-M-110-009, NSC 97-2221-E-009-151, NSC 972221-E-009-148, NSC 97-3114-M-110-001]
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Co nanodot memory devices formed by oxidation processes were studied. Transmission electron microscopy and x-ray photoelectron spectroscopy analyses showed that overoxidation of the cobalt and silicon degraded the charge-storage ability seriously. However, a precapped oxide can mildly oxidize the CoSi(2) film to protect the overoxidation to occur. In addition, an oxygen-incorporated CoSi(2) film is proposed to improve the oxidation process further. Through incorporating the limited oxygen during sputtering process, the Co nanodot memory device obtains a larger memory window. Also, the reliability characteristic of the Co nanodot memory device formed by annealing the oxygen-incorporated CoSi(2) film has been demonstrated.
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