期刊
APPLIED PHYSICS EXPRESS
卷 6, 期 8, 页码 -出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.7567/APEX.6.086504
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资金
- NGK Insulators, Ltd. Japan
The change in threshold voltage (Vth) in AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si occurs during off-state bias stress. Raman spectroscopy shows that the GaN strain/stress changes with the increase in buffer and i-GaN thicknesses. Our results revealed that there is a strong correlation between the Vth shift and GaN strain/stress. The Vth shifts positively and negatively, respectively, for biaxial tensile and compressive strains. We observed minimal device degradation with the negligible Vth shift before and after off-state bias stress for the strain relieved sample. The results illustrate the importance of GaN strain/stress for the degradation and reliability of AlGaN/GaN HEMTs. (C) 2013 The Japan Society of Applied Physics
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