InP/InGaAs Composite Metal–Oxide–Semiconductor Field-Effect Transistors with Regrown Source and Al2O3Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/µm

Submicron InP/InGaAs Composite-Channel Metal–Oxide–Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source

(2010) Toru Kanazawa et al.   Applied Physics Express

Fabrication of Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7 MA/cm2

(2010) Hisashi Saito et al.   Applied Physics Express

Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors

(2010) Han Zhao et al.   APPLIED PHYSICS LETTERS

The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

(2010) H. D. Trinh et al.   APPLIED PHYSICS LETTERS

Role of Carrier Transport in Source and Drain Electrodes of High-Mobility MOSFETs

(2010) Hideaki Tsuchiya et al.   IEEE ELECTRON DEVICE LETTERS

$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

(2009) U. Singisetti et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

(2008) Y. Xuan et al.   IEEE ELECTRON DEVICE LETTERS