Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors

Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

(2012) Chongbiao Luan et al.   APPLIED PHYSICS LETTERS

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

(2012) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS

Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors

(2012) Chongbiao Luan et al.   JOURNAL OF APPLIED PHYSICS

Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures

(2011) S. Pandey et al.   APPLIED PHYSICS LETTERS

Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

(2011) Yuanjie Lv et al.   APPLIED PHYSICS LETTERS

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

(2011) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

Strong stress-enhanced diffusion in amorphous lithium alloy nanowire electrodes

(2011) Y. F. Gao et al.   JOURNAL OF APPLIED PHYSICS

Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors

(2010) Lin Zhou et al.   JOURNAL OF APPLIED PHYSICS

The effects of processing of high-electron-mobility transistors on the strain state and the electrical properties of AlGaN/GaN structures

(2009) F. González-Posada Flores et al.   APPLIED PHYSICS LETTERS

The role of electric field-induced strain in the degradation mechanism of AlGaN/GaN high-electron-mobility transistors

(2009) C. Rivera et al.   APPLIED PHYSICS LETTERS

Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

(2008) M. Gonschorek et al.   JOURNAL OF APPLIED PHYSICS