Comparative investigation of unipolar resistance switching effect of Pt/Mg0.6Zn0.4O/Pt devices with different electrode patterns for nonvolatile memory application

Colossal resistive switching behavior and its physical mechanism of Pt/p-NiO/n-Mg0.6Zn0.4O/Pt thin films

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Thickness dependence of the resistive switching behavior of nonvolatile memory device structures based on undoped ZnO films

(2011) Youn Hee Kang et al.   SOLID STATE COMMUNICATIONS

Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices

(2010) Hu Young Jeong et al.   ADVANCED FUNCTIONAL MATERIALS

Zinc and oxygen vacancies in ZnO nanorods

(2009) A. Travlos et al.   JOURNAL OF APPLIED PHYSICS

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Effects of annealing temperature on the resistance switching behavior of CaCu3Ti4O12 films

(2008) Yu-Shu Shen et al.   THIN SOLID FILMS