A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages
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Title
A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages
Authors
Keywords
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Journal
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS
Volume 43, Issue 12, Pages 2011-2024
Publisher
Wiley
Online
2015-01-13
DOI
10.1002/cta.2057
References
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Related references
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- (2009) Lionel Trojman et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
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- (2008) Ahmad Ehteshamul Islam et al. APPLIED PHYSICS LETTERS
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