Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates
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Title
Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 121, Issue 9, Pages 094302
Publisher
AIP Publishing
Online
2017-03-25
DOI
10.1063/1.4977697
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- (2016) R. Longuinhos et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
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- (2015) Thomas E. Beechem et al. APPLIED PHYSICS LETTERS
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- (2015) Choong Hee Lee et al. APPLIED PHYSICS LETTERS
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- (2015) E. Xenogiannopoulou et al. Nanoscale
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- (2015) Chuan Xu et al. NATURE MATERIALS
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- (2015) L Jiao et al. NEW JOURNAL OF PHYSICS
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- (2015) Chia-Hsin Wu et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
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- (2015) H J Liu et al. 2D Materials
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- (2015) Suresh Vishwanath et al. 2D Materials
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- (2013) Xiao Huang et al. CHEMICAL SOCIETY REVIEWS
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- (2012) Branimir Radisavljevic et al. APPLIED PHYSICS LETTERS
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