Hexagonal MoTe2 with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors

MBE growth of few-layer 2H-MoTe 2 on 3D substrates

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Preservation of Surface Conductivity and Dielectric Loss Tangent in Large-Scale, Encapsulated Epitaxial Graphene Measured by Noncontact Microwave Cavity Perturbations

(2017) Albert F. Rigosi et al.   Small

Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning

(2016) Shu Nakaharai et al.   ACS Applied Materials & Interfaces

Suppression of Interfacial Current Fluctuation in MoTe2 Transistors with Different Dielectrics

(2016) Hyunjin Ji et al.   ACS Applied Materials & Interfaces

Amorphous Boron Nitride: A Universal, Ultrathin Dielectric For 2D Nanoelectronics

(2016) Nicholas R. Glavin et al.   ADVANCED FUNCTIONAL MATERIALS

Direct synthesis of ultra-thin large area transition metal dichalcogenides and their heterostructures on stretchable polymer surfaces

(2016) Michael E. McConney et al.   JOURNAL OF MATERIALS RESEARCH

Highly sensitive visible to infrared MoTe2photodetectors enhanced by the photogating effect

(2016) Hai Huang et al.   NANOTECHNOLOGY

Environmental Changes in MoTe2 Excitonic Dynamics by Defects-Activated Molecular Interaction

(2015) Bin Chen et al.   ACS Nano

Reliable Exfoliation of Large-Area High-Quality Flakes of Graphene and Other Two-Dimensional Materials

(2015) Yuan Huang et al.   ACS Nano

Recent Advances in Two-Dimensional Materials beyond Graphene

(2015) Ganesh R. Bhimanapati et al.   ACS Nano

All Chemical Vapor Deposition Growth of MoS2:h-BN Vertical van der Waals Heterostructures

(2015) Shanshan Wang et al.   ACS Nano

Mobility enhancement in graphene transistors on low temperature pulsed laser deposited boron nitride

(2015) Md Ahsan Uddin et al.   APPLIED PHYSICS LETTERS

Temporally and spatially resolved plasma spectroscopy in pulsed laser deposition of ultra-thin boron nitride films

(2015) Nicholas R. Glavin et al.   JOURNAL OF APPLIED PHYSICS

Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe2

(2015) Ignacio Gutiérrez Lezama et al.   NANO LETTERS

Direct Growth of Single- and Few-Layer MoS2 on h-BN with Preferred Relative Rotation Angles

(2015) Aiming Yan et al.   NANO LETTERS

Bandgap opening in few-layered monoclinic MoTe 2

(2015) Dong Hoon Keum et al.   Nature Physics

Phase patterning for ohmic homojunction contact in MoTe2

(2015) S. Cho et al.   SCIENCE

High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films

(2015) M Waqas Iqbal et al.   Scientific Reports

Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding

(2014) Haiyan Nan et al.   ACS Nano

Few-Layer MoS2: A Promising Layered Semiconductor

(2014) Rudren Ganatra et al.   ACS Nano

Field-Effect Transistors Based on Few-Layered α-MoTe2

(2014) Nihar R. Pradhan et al.   ACS Nano

Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2

(2014) Mahito Yamamoto et al.   ACS Nano

Ambipolar MoTe2Transistors and Their Applications in Logic Circuits

(2014) Yen-Fu Lin et al.   ADVANCED MATERIALS

Exfoliated multilayer MoTe2 field-effect transistors

(2014) S. Fathipour et al.   APPLIED PHYSICS LETTERS

Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals

(2014) Claudia Ruppert et al.   NANO LETTERS

Electronics based on two-dimensional materials

(2014) Gianluca Fiori et al.   Nature Nanotechnology

Synthesis of few-layer, large area hexagonal-boron nitride by pulsed laser deposition

(2014) Nicholas R. Glavin et al.   THIN SOLID FILMS

Two-dimensional flexible nanoelectronics

(2014) Deji Akinwande et al.   Nature Communications

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

(2013) Gwan-Hyoung Lee et al.   ACS Nano

Nano boron nitride flatland

(2013) Amir Pakdel et al.   CHEMICAL SOCIETY REVIEWS

Prospects of direct growth boron nitride films as substrates for graphene electronics

(2013) Michael S. Bresnehan et al.   JOURNAL OF MATERIALS RESEARCH

Thickness-dependent patterning of MoS2 sheets with well-oriented triangular pits by heating in air

(2013) Haiqing Zhou et al.   Nano Research

Van der Waals heterostructures

(2013) A. K. Geim et al.   NATURE

Toward the Controlled Synthesis of Hexagonal Boron Nitride Films

(2012) Ariel Ismach et al.   ACS Nano

Synthesis of Few-Layer Hexagonal Boron Nitride Thin Film by Chemical Vapor Deposition

(2010) Yumeng Shi et al.   NANO LETTERS

Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers

(2010) Li Song et al.   NANO LETTERS

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology