Hexagonal MoTe2 with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors
出版年份 2018 全文链接
标题
Hexagonal MoTe2 with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors
作者
关键词
-
出版物
Scientific Reports
Volume 8, Issue 1, Pages -
出版商
Springer Nature
发表日期
2018-05-31
DOI
10.1038/s41598-018-26751-4
参考文献
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