4.4 Article

Optoelectronic Characterizations of Two-Dimensional h-BN/MoSe2 Heterostructures Based Photodetector

Journal

SCIENCE OF ADVANCED MATERIALS
Volume 10, Issue 5, Pages 627-631

Publisher

AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/sam.2018.3135

Keywords

Two-Dimensional (2D) Materials; van der Waals (vdW) Heterostructure; MOSFET; Hexagonal Boron Nitride (h-BN); Molybdenum Diselenide (MoSe2)

Funding

  1. Korea Institute of Energy Technology Evaluation and Planning (KETEP)
  2. Ministry of Trade, Industry and Energy (MOTIE) of the Republic of Korea [20164010201020]
  3. Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2017R1D1A3B03033176]

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Thanks to their unique physical properties, two-dimensional (2D) material based electronic and optoelectronic devices have attracted much attention. In this paper, we studied metal-oxide-semiconductor field-effect transistors (MOSFETs) based on two-dimensional materials. The designed MOSFET consists of multiple layers of hexagonal boron nitride (h-BN) and molybdenum diselenide (MoSe2) as insulator and active layers, respectively. Both 2D materials were deposited using a mechanical exfoliation technique. Electrical and optoelectronic characterizations were carried out; the MOSFET showed good gate controllability and exhibited high photore-sponsivity and a specific detectivity of 42 m.A.W-1 and 6.22 x 10(9) cm.Hz(0.5).W-1, respectively, which make this new device promising for photodetection applications.

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