Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium–Gallium–Zinc Thin-Film-Transistors by CF4+O2 Plasma Treatment

Published 2015 View Full Article

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Title
Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium–Gallium–Zinc Thin-Film-Transistors by CF4+O2 Plasma Treatment
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 9, Pages 911-913
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-07-14
DOI
10.1109/led.2015.2456034

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